微机电器件设计、制造及计算机辅助设计/京航空航天“研究生英文教材”系列丛书 企业批量购书 分享 关注商品举报 微机电器件设计、制造及计算机辅助设计

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丛书名：京航空航天“研究生英文教材”系列丛书

• 作者：郭占社 著
• 出版时间：2016/6/1
• ISBN：9787512421097
• 出 版 社：北京航空航天大学出版社

• 中图法分类：TN4 
• 纸张：胶版纸
• 版次：1
• 开本：16K

内容简介

Thisbookfirstlyintroducesthepertinentfundamentaltheory，importantmaterialandfabricationprocessofmicroＧelectromechanicalsystems．Basedonthesetheories，thedesignruleandimportantengineeringexamplesaredescribedindetail．Then，manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement，theangularspeedmeasurementandthepressuremeasurementareintroduced．Finally，finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign．Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam，capacitanceanalysis，thermalＧstructureanalysisofthedeviceandfatigueanalysisetc．Itcanbeselectedasthereferencetothepostgraduates，undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology，controlscienceandengineering，mechanicalengineeringetc．

目 录

Chapter1　Introduction ………………………………………………………………………… 1
1．1　ConceptofMEMS ……………………………………………………………………… 1
1．2　DevelopmentofMEMS ………………………………………………………………… 4
1．3　MEMSCAD …………………………………………………………………………… 9
Chapter2　BasictheoryofMEMS …………………………………………………………… 12
2．1　TheoryofelectrostaticMEMScombactuators …………………………………… 12
2．1．1　Introduction ……………………………………………………………………… 12
2．1．2　Operatingprinciples …………………………………………………………… 13
2．1．3　Platecapacitortheoryinidealcondition ……………………………………… 14
2．1．4　ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2．1．5　Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2．1．6　Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2．2　RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2．2．1　Introduction ……………………………………………………………………… 34
2．2．2　Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2．2．3　RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2．2．4　RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2．3　MembranetheoryofMEMS ………………………………………………………… 47
2．3．1　Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2．3．2　Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3　MEMSmaterials …………………………………………………………………… 53
3．1　Monocrystallinesilicon ……………………………………………………………… 53
3．1．1　Introduction ……………………………………………………………………… 53
3．1．2　Crystalorientationofmonocrystallinesilicon ………………………………… 55
3．2　Polycrystallinesilicon ………………………………………………………………… 64
3．3　Silica …………………………………………………………………………………… 66
3．4　Piezoelectricmaterials ………………………………………………………………… 67
3．4．1　Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3．4．2　Quartzcrystal …………………………………………………………………… 68
3．4．3　Piezoelectricceramics …………………………………………………………… 73
3．5　OtherMEMSmaterials ……………………………………………………………… 75
3．6　Summary ……………………………………………………………………………… 76
Chapter4　MEMStechnology ………………………………………………………………… 77
4．1　MEMSlithographyprocess ………………………………………………………… 78
4．2　KeytechnologyofMEMSlithographyprocess …………………………………… 80
4．2．1　Wafercleaning …………………………………………………………………… 80
4．2．2　Siliconoxidation ………………………………………………………………… 80
4．2．3　Spincoatingprocess …………………………………………………………… 87
4．2．4　Prebaking ………………………………………………………………………… 90
4．2．5　Exposure ………………………………………………………………………… 92
4．2．6　Development ……………………………………………………………………… 94
4．2．7　Hardening ………………………………………………………………………… 96
4．2．8　FabricationoftheSiO2 window ………………………………………………… 97
4．3　SubsequentprocessofMEMS ……………………………………………………… 98
4．3．1　Bulksilicontechnology ………………………………………………………… 98
4．3．2　Surfacesiliconprocess ………………………………………………………… 103
4．3．3　LIGAtechnology ……………………………………………………………… 104
4．3．4　Sputteringtechnology ………………………………………………………… 105
4．3．5　LiftGoffprocess ………………………………………………………………… 107
4．4　Filmpreparationtechnology………………………………………………………… 107
4．5　Bondingprocess ……………………………………………………………………… 108
4．5．1　Anodicbondingprocess………………………………………………………… 109
4．5．2　SiliconGsilicondirectbonding ………………………………………………… 110
4．5．3　Metaleutecticbonding ………………………………………………………… 113
4．5．4　Coldpressureweldingbonding ……………………………………………… 114
4．6　Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4．6．1　Introduction …………………………………………………………………… 115
4．6．2　EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4．6．3　EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4．7　Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5　Frictionwearandtearundermicroscale ……………………………………… 126
5．1　OffGchiptestingmethodformicrofriction ………………………………………… 127
5．1．1　MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5．1．2　MicroGtribologytestwithAFM ……………………………………………… 128
5．1．3　MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5．2　OnGchiptestingmethodformicrofriction ………………………………………… 132
5．2．1　OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5．2．2　OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5．3　ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5．3．1　Structureandworkingprinciple ……………………………………………… 141
5．3．2　Calculationofpertinenttheory ……………………………………………… 142
5．3．3　Technologicalanalysisofstructuraldesign ………………………………… 148
5．3．4　Testingresultsanddataanalysis……………………………………………… 152
5．3．5　ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5．4　Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6　MEMStestingtechnologyandengineeringapplication ………………………… 169
6．1　Accelerationmeasurementandcorrespondingsensors …………………………… 169
6．1．1　Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6．1．2　Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6．1．3　Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6．1．4　Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6．1．5　ResonantsiliconMEMSaccelerometer ……………………………………… 175
6．2　Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6．2．1　Workingprinciple ……………………………………………………………… 177
6．2．2　DevelopmentofMEMSgyroscope …………………………………………… 178
6．2．3　Classificationofmicromechanicalgyroscope ………………………………… 188
6．3　Pressuremeasurementandcorrespondingsensors ……………………………… 190
6．3．1　Workingpincinple ……………………………………………………………… 190
6．3．2　Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6．4　MeasurementofmicroGtorque ……………………………………………………… 198
6．4．1　Introduction …………………………………………………………………… 198
6．4．2　Workingprincipleofnoncontactmethod …………………………………… 199
6．4．3　Theoreticalcalculation ………………………………………………………… 200
6．4．4　Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6．4．5　Experimentresultanddiscussion …………………………………………… 209
6．5　Microscopicmorphologytestingmethod ………………………………………… 211
6．6　Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7　Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7．1　Importantconceptsofthesoftware………………………………………………… 218
7．2　IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7．3　ThecoordinatesysteminAnsys …………………………………………………… 221
7．4　Engineeringexamples ……………………………………………………………… 226
7．4．1　StaticanalysisofsingleGclampedbeam ……………………………………… 226
7．4．2　ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7．4．3　CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7．4．4　Fatiguestrengthcalculationexample ………………………………………… 264
7．5　Summary ……………………………………………………………………………… 272